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FEATURES 1.8 V to 5.5 V Single Supply 3 V Dual Supply 3 On-Resistance 0.75 On-Resistance Flatness 100 pA Leakage Currents 14 ns Switching Times Single 8-to-1 Multiplexer ADG708 Differential 4-to-1 Multiplexer ADG709 16-Lead TSSOP Package Low Power Consumption TTL/CMOS-Compatible Inputs APPLICATIONS Data Acquisition Systems Communication Systems Relay Replacement Audio and Video Switching Battery-Powered Systems
S1
CMOS, 3 Low Voltage 4-/8-Channel Multiplexers ADG708/ADG709
FUNCTIONAL BLOCK DIAGRAMS
ADG708
S1A DA S4A D S1B DB S8 1 OF 8 DECODER S4B 1 OF 4 DECODER
ADG709
A0 A1
A2 EN
A0
A1
EN
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG708 and ADG709 are low voltage, CMOS analog multiplexers comprising eight single channels and four differential channels respectively. The ADG708 switches one of eight inputs (S1-S8) to a common output, D, as determined by the 3-bit binary address lines A0, A1, and A2. The ADG709 switches one of four differential inputs to a common differential output as determined by the 2-bit binary address lines A0 and A1. An EN input on both devices is used to enable or disable the device. When disabled, all channels are switched OFF. Low power consumption and operating supply range of 1.8 V to 5.5 V make the ADG708 and ADG709 ideal for battery-powered, portable instruments. All channels exhibit break-before-make switching action preventing momentary shorting when switching channels. These switches are designed on an enhanced submicron process that provides low power dissipation yet gives high switching speed, very low on-resistance and leakage currents. On-resistance is in the region of a few ohms and is closely matched between switches and very flat over the full signal range. These parts can operate equally well as either Multiplexers or Demultiplexers, and have an input signal range that extends to the supplies. The ADG708 and ADG709 are available in a 16-lead TSSOP package.
1. Single/Dual Supply Operation. The ADG708 and ADG709 are fully specified and guaranteed with 3 V and 5 V single supply and 3 V dual supply rails. 2. Low RON (3 Typical). 3. Low Power Consumption (<0.01 W). 4. Guaranteed Break-Before-Make Switching Action. 5. Small 16-Lead TSSOP Package.
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 World Wide Web Site: http://www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2000
ADG708/ADG709-SPECIFICATIONS1 (V
Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (R ON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage I D, I S (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tTRANSITION
2
DD
=5V
10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
B Version -40 C +25 C to +85 C 0 V to VDD 3 4.5 5 0.4 0.8 1.2 0.01 0.01 0.01
C Version -40 C +25 C to +85 C 0 V to VDD 3 4.5 5 0.4 0.8 1.2 0.01 0.1 0.3 0.01 0.1 0.75 0.01 0.1 0.75 2.4 0.8 0.005 0.1 2 14
Unit V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns min ns typ ns max ns typ ns max pC typ dB typ dB typ dB typ dB typ MHz typ pF typ pF typ pF typ pF typ pF typ A typ A max
Test Conditions/Comments
VS = 0 V to VDD, I DS = 10 mA; Test Circuit 1 VS = 0 V to VDD, I DS = 10 mA VS = 0 V to VDD, I DS = 10 mA VDD = 5.5 V VD = 4.5 V/1 V, VS = 1 V/4.5 V; Test Circuit 2 VD = 4.5 V/1 V, VS = 1 V/4.5 V; Test Circuit 3 VD = VS = 1 V, or 4.5 V, Test Circuit 4
0.75
0.75
20 20 20 2.4 0.8
0.005 0.1 2 14 25 8 1 14 25 7 12 3 -60 -80 -60 -80 55 13 85 42 96 48 0.001 1.0
VIN = VINL or V INH
25 8 1 14 25 7 12 3 -60 -80 -60 -80 55 13 85 42 96 48 0.001 1.0
Break-Before-Make Time Delay, t D tON(EN) tOFF(EN) Charge Injection Off Isolation
Channel-to-Channel Crosstalk
-3 dB Bandwidth CS (OFF) CD (OFF) ADG708 ADG709 CD , CS (ON) ADG708 ADG709 POWER REQUIREMENTS IDD
RL = 300 , CL = 35 pF, Test Circuit 5 VS1 = 3 V/0 V, VS8 = 0 V/3 V RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 6 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 7 RL = 300 , CL = 35 pF VS = 3 V, Test Circuit 7 VS = 2.5 V, RS = 0 , CL = 1 nF; Test Circuit 8 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 10 RL = 50 , CL = 5 pF, Test Circuit 9
VDD = 5.5 V Digital Inputs = 0 V or 5.5 V
NOTES 1 Temperature range is as follows: B and C Versions: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
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ADG708/ADG709
SPECIFICATIONS1 (V
Parameter
DD
=3V
10%, VSS = 0 V, GND = 0 V, unless otherwise noted)
C Version -40 C +25 C to +85 C
B Version -40 C +25 C to +85 C
Unit
Test Conditions/Comments
ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (RON) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or I INH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tTRANSITION
2
0 V to VDD 8 11 12 0.4 1.2
8 11
0 V to VDD V typ 12 max 0.4 typ 1.2 max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns min ns typ ns max ns typ ns max pC typ
dB typ dB typ dB typ dB typ
VS = 0 V to VDD, IDS = 10 mA; Test Circuit 1 VS = 0 V to VDD , IDS = 10 mA VDD = 3.3 V VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 2 VS = 3 V/1 V, VD = 1 V/3 V; Test Circuit 3 VS = VD = 1 V or 3 V, Test Circuit 4
0.01 0.01 0.01
20 20 20 2.0 0.4
0.01 0.1 0.3 0.01 0.1 0.75 0.01 0.1 0.75 2.0 0.4 0.005 2 18 0.1
0.005 2 18
0.1
VIN = VINL or VINH
30 Break-Before-Make Time Delay, tD tON(EN) tOFF(EN) Charge Injection
Off Isolation
30 8 1 18 30 8 3
-60 -80 -60 -80
8 1 18 30 8 3
-60 -80 -60 -80
15
15
RL = 300 , CL = 35 pF, Test Circuit 5 VS1 = 2 V/0 V, V S2 = 0 V/2 V RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 6 RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 7 RL = 300 , CL = 35 pF VS = 2 V, Test Circuit 7 VS = 1.5 V, RS = 0 , CL = 1 nF; Test Circuit 8
RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 RL = 50 , CL = 5 pF, f = 10 MHz RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 10
Channel-to-Channel Crosstalk
-3 dB Bandwidth CS (OFF) CD (OFF) ADG708 ADG709 CD, CS (ON) ADG708 ADG709 POWER REQUIREMENTS IDD
55 13 85 42 96 48 0.001 1.0
55 13 85 42 96 48 0.001 1.0
MHz typ pF typ pF typ pF typ pF typ pF typ A typ A max
RL = 50 , CL = 5 pF, Test Circuit 9
VDD = 3.3 V Digital Inputs = 0 V or 3.3 V
NOTES 1 Temperature ranges are as follows: B and C Versions: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
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ADG708/ADG709-SPECIFICATIONS1
DUAL SUPPLY (V
Parameter ANALOG SWITCH Analog Signal Range On-Resistance (RON) On-Resistance Match Between Channels (R ON) On-Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage I D, I S (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS tTRANSITION
2
DD
= +3 V
10%, VSS = -3 V
10%, GND = 0 V)
C Version -40 C +25 C to +85 C VSS to VDD 2.5 4.5 5 0.4 0.8 1.0 0.01 0.1 0.3 0.01 0.1 0.75 0.01 0.1 0.75 2.0 0.4 0.005 2 14 0.1
B Version -40 C +25 C to +85 C VSS to VDD 2.5 4.5 5 0.4 0.8 1.0 0.01 0.01 0.01
Unit V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns min ns typ ns max ns typ ns max pC typ
Test Conditions/Comments
VS = VSS to V DD, IDS = 10 mA; Test Circuit 1 VS = VSS to V DD, IDS = 10 mA VS = VSS to V DD, IDS = 10 mA VDD = +3.3 V, V SS = -3.3 V VS = +2.25 V/-1.25 V, V D = -1.25 V/+2.25 V; Test Circuit 2 VS = +2.25 V/-1.25 V, V D = -1.25 V/+2.25 V; Test Circuit 3 VS = VD = +2.25 V/-1.25 V, Test Circuit 4
0.6
0.6
20 20 20 2.0 0.4
0.005 2 14
0.1
VIN = VINL or V INH
25 Break-Before-Make Time Delay, tD tON(EN) tOFF(EN) Charge Injection Off Isolation 8 1 14 25 8 3 -60 -80 -60 -80 55 13 85 42 96 48 0.001 1.0 ISS 0.001 1.0
NOTES 1 Temperature range is as follows: B and C Versions: -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
25 8 1 14 25 8 3 -60 -80 -60 -80 55 13 85 42 96 48 0.001 1.0 0.001 1.0 15
15
Channel-to-Channel Crosstalk
-3 dB Bandwidth CS (OFF) CD (OFF) ADG708 ADG709 CD , CS (ON) ADG708 ADG709 POWER REQUIREMENTS IDD
RL = 300 , CL = 35 pF, Test Circuit 5 VS = 1.5 V/0 V, Test Circuit 5 RL = 300 , CL = 35 pF VS = 1.5 V, Test Circuit 6 RL = 300 , CL = 35 pF VS = 1.5 V, Test Circuit 7 RL = 300 , CL = 35 pF VS = 1.5 V, Test Circuit 7 VS = 0 V, RS = 0 , CL = 1 nF; Test Circuit 8 dB typ RL = 50 , CL = 5 pF, f = 10 MHz dB typ RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 9 dB typ RL = 50 , CL = 5 pF, f = 10 MHz dB typ RL = 50 , CL = 5 pF, f = 1 MHz; Test Circuit 10 MHz typ RL = 50 , CL = 5 pF, Test Circuit 9 pF typ
pF typ pF typ pF typ pF typ A typ A max A typ A max VDD = 3.3 V Digital Inputs = 0 V or 3.3 V VSS = -3.3 V Digital Inputs = 0 V or 3.3 V
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ADG708/ADG709
ABSOLUTE MAXIMUM RATINGS 1
(TA = 25C unless otherwise noted)
VDD to VSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +7 V VSS to GND . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to -3.5 V Analog Inputs2 . . . . . . . . . . . . . . VSS - 0.3 V to VDD +0.3 V or 30 mA, Whichever Occurs First Digital Inputs2 . . . . . . . . . . . . . . . . . . -0.3 V to V DD +0.3 V or 30 mA, Whichever Occurs First Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA . . . . . . . . . . . . . . . . . (Pulsed at 1 ms, 10% Duty Cycle max) Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . 30 mA Operating Temperature Range Industrial (B, C Versions) . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150C
TSSOP Package, Power Dissipation . . . . . . . . . . . . . 432 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . . 150.4C/W JC Thermal Impedance . . . . . . . . . . . . . . . . . . . . 27.6C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG708/ADG709 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
Table I. ADG708 Truth Table
PIN CONFIGURATIONS TSSOP
A2 X 0 0 0 0 1 1 1 1
A1 X 0 0 1 1 0 0 1 1
A0 X 0 1 0 1 0 1 0 1
EN 0 1 1 1 1 1 1 1 1
Switch Condition NONE 1 2 3 4 5 6 7 8
A0 1 EN 2 VSS 3 S1 4 S2 5 S3 6 S4 7 D8
16 A1 15 A2
ADG708
14 GND
13 VDD TOP VIEW (Not to Scale) 12 S5 11 S6 10 S7 9 S8
X = Don't Care
Table II. ADG709 Truth Table
A1 X 0 0 1 1
A0 X 0 1 0 1
EN 0 1 1 1 1
ON Switch Pair NONE 1 2 3 4
A0 1 EN 2 VSS 3 S1A 4 S2A 5 S3A 6 S4A 7 DA 8
16 A1 15 GND
ADG709
14 VDD
13 S1B TOP VIEW (Not to Scale) 12 S2B 11 S3B 10 S4B 9 DB
X = Don't Care.
ORDERING GUIDE
Model ADG708BRU ADG709BRU ADG708CRU ADG709CRU
Temperature Range -40C to +85C -40C to +85C -40C to +85C -40C to +85C
Package Description 16-Lead Thin Shrink Small Outline Package (TSSOP) 16-Lead Thin Shrink Small Outline Package (TSSOP) 16-Lead Thin Shrink Small Outline Package (TSSOP) 16-Lead Thin Shrink Small Outline Package (TSSOP)
Package Option RU-16 RU-16 RU-16 RU-16
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ADG708/ADG709
TERMINOLOGY
VDD VSS
Most positive power supply potential. Most negative power supply in a dual supply application. In single supply applications, this should be tied to ground at the device. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Ohmic resistance between D and S. Flatness is defined as the difference between the maximum and minimum value of on-resistance as measured over the specified analog signal range. Source leakage current with the switch "OFF." Drain leakage current with the switch "OFF." Channel leakage current with the switch "ON." Analog voltage on terminals D, S. "OFF" switch source capacitance. Measured with reference to ground. "OFF" switch drain capacitance. Measured with reference to ground.
tON (EN)
Delay time between the 50% and 90% points of the EN digital input and the switch "ON" condition. Delay time between the 50% and 90% points of the EN digital input and the switch "OFF" condition. "OFF" time measured between the 80% points of both switches when switching from one address state to another. A measure of unwanted signal coupling through an "OFF" switch. A measure of unwanted signal which is coupled through from one channel to another as a result of parasitic capacitance. A measure of the glitch impulse transferred from the digital input to the analog output during switching. The frequency at which the output is attenuated by 3 dBs. The loss due to the ON resistance of the switch. Maximum input voltage for Logic "0." Minimum input voltage for Logic "1." Input current of the digital input. Positive Supply Current. Negative Supply Current.
tOFF (EN)
GND S D IN RON RFLAT(ON)
tOPEN
Off Isolation Crosstalk
IS (OFF) ID (OFF) ID, IS (ON) VD (VS) CS (OFF) CD (OFF)
Charge Injection Bandwidth
On Response The frequency response of the "ON" switch. On Loss VINL VINH IINL (IINH) IDD ISS
CD, CS (ON) "ON" switch capacitance. Measured with reference to ground. CIN tTRANSITION Digital Input Capacitance. Delay time measured between the 50% and 90% points of the digital inputs and the switch "ON" condition when switching from one address state to another.
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Typical Performance Characteristics- ADG708/ADG709
8 7 6 VDD = 2.7V ON RESISTANCE - 5 VDD = 3.3V 4 VDD = 4.5V 3 2 1 0 0 1 2 3 4 VD, VS, DRAIN OR SOURCE VOLTAGE - V 5 VDD = 5.5V ON RESISTANCE - 5 4 -40 C 3 2 1 0 0 1.0 1.5 2.0 2.5 0.5 VD OR VS - DRAIN OR SOURCE VOLTAGE - V 3.0 +25 C TA = 25 C VSS = 0V 8 7 6 +85 C VDD = 3V VSS = 0V
Figure 1. On Resistance as a Function of VD (VS) for Single Supply
Figure 4. On Resistance as a Function of VD (VS) for Different Temperatures, Single Supply
8 TA = 25 C 7 6 ON RESISTANCE - 5 4 3 2 1 VDD = +3.0V VSS = -3.0V 0 VDD = +2.75V VSS = -2.75V 0.5 1.0 1.5 2.0 2.5 3.0 ON RESISTANCE -
8 7 6 5 4 +25 C 3 2 1 0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -40 C +85 C VDD = +3.0V VSS = -3.0V
VDD = +2.25V VSS = -2.25V
0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5
0
0.5 1.0
1.5
2.0
2.5 3.0
VD OR VS - DRAIN OR SOURCE VOLTAGE - V
VD OR VS - DRAIN OR SOURCE VOLTAGE - V
Figure 2. On Resistance as a Function of VD (VS) for Dual Supply
Figure 5. On Resistance as a Function of VD (VS) for Different Temperatures, Dual Supply
8 7 6 ON RESISTANCE - 5 4 +25 C 3 2 -40 C 1 0 0 +85 C
VDD = 5V VSS = 0V
0.12 VDD = 5V VSS = 0V TA = 25 C ID (ON)
0.08
CURRENT - nA
0.04
0.00
-0.04
IS (OFF)
-0.08
ID (OFF)
-0.12 1 2 3 4 VD OR VS - DRAIN OR SOURCE VOLTAGE - V 5 0 1 2 3 VD (VS) - Volts 4 5
Figure 3. On Resistance as a Function of VD (VS) for Different Temperatures, Single Supply
Figure 6. Leakage Currents as a Function of V D (V S)
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ADG708/ADG709
0.12 VDD = 3V VSS = 0V TA = 25 C 0.35 0.30 0.25 CURRENT - nA CURRENT - nA 0.04 ID (ON) 0.20 0.15 0.10 0.05 -0.08 0.00 -0.12 0 0.5 1.0 1.5 2.0 VD (VS) - Volts 2.5 3.0 -0.05 15 IS (OFF) 25 35 45 55 65 TEMPERATURE - C ID (ON) 75 85 ID (OFF) VDD = 3V VSS = 0V 0.08
0.00
-0.04
IS (OFF)
ID (OFF)
Figure 7. Leakage Currents as a Function of V D (V S)
Figure 10. Leakage Currents as a Function of Temperature
0.12 VDD = +3.0V VSS = -3.0V TA = 25 C ID (ON)
10m TA = 25 C 1m VDD = +3.0V VSS = -3.0V
0.08
100 CURRENT - nA CURRENT - A 0.04 10 1
0.00
VDD = +5V VDD = +3V
-0.04
IS (OFF) 100n
-0.08
ID (OFF)
10n 1n 10
-0.12 0.5 1.0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0 VD (VS) - Volts
1.5
2.0
2.5
3.0
100
1k
10k 100k FREQUENCY - Hz
1M
10M
Figure 8. Leakage Currents as a Function of V D (V S)
Figure 11. Supply Current vs. Input Switching Frequency
0.35 0.30 0.25 CURRENT - nA 0.20 0.15 0.10 0.05 0.00 ID (OFF)
VDD = 5V VSS = 0V AND VDD = +3V VSS = -3V ATTENUATION - dB
0 VDD = 5V TA = 25 C -20
-40
-60
-80
ID (ON) -100 IS (OFF)
-0.05 15
25
35
45 55 65 TEMPERATURE - C
75
85
-120 30k
100k
1M FREQUENCY - Hz
10M
100M
Figure 9. Leakage Currents as a Function of Temperature
Figure 12. Off Isolation vs. Frequency
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ADG708/ADG709
0 VDD = 5V TA = 25 C -20 -5 ATTENUATION - dB -40 ATTENUATION - dB 0 VDD = 5V TA = 25 C
-60
-10
-80
-15 -100
-120 30k
100k
1M FREQUENCY - Hz
10M
100M
-20 30k
100k
1M FREQUENCY - Hz
10M
100M
Figure 13. Crosstalk vs. Frequency
Figure 14. On Response vs. Frequency
20 TA = 25 C 10 VDD = 5V VSS = 0V
0
QINJ - pC
-10
VDD = 3V VSS = 0V
-20
VDD = +3V VSS = -3V
-30
-40 -3
-2
-1
2 0 1 VOLTAGE - Volts
3
4
5
Figure 15. Charge Injection vs. Source Voltage
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ADG708/ADG709 Test Circuits
IDS VDD V1 VDD S1 S VS VS RON = V1/IDS D S2 S8 GND EN D 0.8V VSS ID (OFF)
A
VSS
VD
Test Circuit 1. On Resistance
Test Circuit 3. I D (OFF)
VDD VDD S1 S2 S8 VD GND
VSS VSS S1 D 0.8V VS S8
VDD
VSS VSS ID (ON) D 2.4V
A
VDD
IS(OFF)
A
VS
VD
EN
GND
EN
Test Circuit 2. IS (OFF)
Test Circuit 4. I D (ON)
VDD VDD A2 VIN 50 A1 A0
VSS VSS S1 S2 THRU S7 S8 D GND RL 300 CL 35pF VS8 VOUT VS1 ADDRESS DRIVE (VIN)
3V 50% 0V 50%
ADG708*
2.4V EN
VS1 90% VOUT 90% VS8
* SIMILAR CONNECTION FOR ADG709
tTRANSITION
tTRANSITION
Test Circuit 5. Switching Time of Multiplexer, tTRANSITION
VDD VDD A2 VIN 50 A1 A0
VSS VSS S1 S2 THRU S7 S8 D GND RL 300 CL 35pF VOUT VS
3V ADDRESS DRIVE (VIN) 0V
ADG708*
2.4V EN
VOUT
80%
80%
tOPEN * SIMILAR CONNECTION FOR ADG709
Test Circuit 6. Break-Before-Make Delay, tOPEN
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ADG708/ADG709
VDD VDD A2 A1 A0 S2 THRU S8 VSS VSS S1 VS 3V ENABLE DRIVE (VIN) 0V tOFF (EN) V0 D GND RL 300 CL 35pF VOUT OUTPUT 0V tON (EN) * SIMILAR CONNECTION FOR ADG709 0.9V0 0.9V0 50% 50%
ADG708*
EN VIN 50
Test Circuit 7. Enable Delay, tON (EN), tOFF (EN)
VDD A2 VDD A1 A0 RS VS VIN S EN GND
VSS VSS
3V LOGIC INPUT (VIN) 0V
ADG708*
D CL 1nF VOUT VOUT QINJ = CL VOUT VOUT
*SIMILAR CONNECTION FOR ADG709
Test Circuit 8. Charge Injection
VDD VDD A2 A1 A0 S1 S8
VSS VDD EN 2.4V
A2 A1 VS 50
A0 ADG708* S1 S2 D RL 50 GND VSS VOUT
ADG708*
D VSS RL 50
EN** GND
VOUT VS
S8
VSS OFF ISOLATION = 20LOG10 INSERTION LOSS = 20LOG10 VOUT VS
VSS CHANNEL-TO-CHANNEL CROSSTALK = 20LOG10 * SIMILAR CONNECTION FOR ADG709
VOUT VS
(
VOUT WITH SWITCH VOUT WITHOUT SWITCH
)
* SIMILAR CONNECTION FOR ADG709 ** CONNECT TO 2.4V FOR BANDWIDTH MEASUREMENTS
Test Circuit 9. OFF Isolation and Bandwidth
Power-Supply Sequencing
Test Circuit 10. Channel-to-Channel Crosstalk
When using CMOS devices, care must be taken to ensure correct power-supply sequencing. Incorrect power-supply sequencing can result in the device being subjected to stresses beyond the maximum ratings listed in the data sheet. Digital and analog inputs should always be applied after power supplies and ground. For single supply operation, VSS should be tied to GND as close to the device as possible.
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ADG708/ADG709
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
16-Lead TSSOP (RU-16)
0.201 (5.10) 0.193 (4.90)
16 9
0.177 (4.50) 0.169 (4.30)
1
8
PIN 1 0.006 (0.15) 0.002 (0.05) 0.0433 (1.10) MAX 0.0118 (0.30) 0.0075 (0.19)
0.256 (6.50) 0.246 (6.25)
0.0256 SEATING (0.65) PLANE BSC
8 0 0.0079 (0.20) 0.0035 (0.090)
0.028 (0.70) 0.020 (0.50)
-12-
REV. 0
PRINTED IN U.S.A.
C3712-8-1/00 (rev. 0)

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